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[IEEE 31st European Solid-State Device Research Conference - Nuremberg, Germany (2001.9.11-2001.9.13)] 31st European Solid-State Device Research Conference - Gate and Source/Drain Engineering for 50 nm P-Channel MOSFET

✍ Scribed by Guegan, G.; Deleonibus, S.; Bertrand, G.; Souil, D.; Rivallin, P.; Tedesco, S.; Mur, P.; Holliger, P.; Nier, M.E.

Book ID: 127393395
Publisher: IEEE
Year: 2001
Weight: 613 KB
Category: Article
ISBN-13: 9782914601016
DOI: 10.1109/essderc.2001.195228

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