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[IEEE 31st European Solid-State Device Research Conference - Nuremberg, Germany (2001.9.11-2001.9.13)] 31st European Solid-State Device Research Conference - Arsenic and Phosphorus co-Implantation for Deep Submicron CMOS Gate and Source/Drain Engineering

✍ Scribed by Augendre, E.; De Keersgieter, A.; Kubicek, S.; Redolfi, A.; Van Laer, J.; Badenes, G.

No coin nor oath required. For personal study only.

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