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[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding

✍ Scribed by Takemura, K.; Morimoto, M.; Nishida, S.; Liang, J.; Shigekawa, N.

Book ID: 126724736
Publisher: IEEE
Year: 2014
Weight: 667 KB
Category: Article
ISBN: 1479936146
DOI: 10.1109/IMFEDK.2014.6867078

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