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[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy

✍ Scribed by Kimura, K.; Hosotani, K.; Ito, T.; Shimoyama, H.; Sakamoto, T.; Mori, M.; Maezawa, K.

Book ID: 126639057
Publisher: IEEE
Year: 2014
Weight: 211 KB
Category: Article
ISBN: 1479936146
DOI: 10.1109/IMFEDK.2014.6867066

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