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[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs

✍ Scribed by Matsuda, Akihiro; Hiroki, Akira; Goto, Yuta; Nakamura, Masaaki; Yoon, JongChul

Book ID: 126639056
Publisher: IEEE
Year: 2014
Weight: 327 KB
Category: Article
ISBN: 1479936146
DOI: 10.1109/IMFEDK.2014.6867056

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