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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates

✍ Scribed by Asano, T.; Terashima, T.; Yamaha, T.; Kurosawa, M.; Takeuchi, W.; Taoka, N.; Nakatsuka, O.; Zaima, S.

Book ID: 127065102
Publisher: IEEE
Year: 2014
Weight: 262 KB
Category: Article
ISBN: 1479954268
DOI: 10.1109/istdm.2014.6874688

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