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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Strained Ge FinFET structures fabricated by selective epitaxial growth

✍ Scribed by Loo, Roger; Jianwu Sun, ; Witters, Liesbeth; Hikavyy, Andriy; Vincent, Benjamin; Shimura, Yosuke; Favia, Paola; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Collaert, Nadine; Thean, Aaron

Book ID: 126106790
Publisher: IEEE
Year: 2014
Weight: 919 KB
Category: Article
ISBN: 1479954268
DOI: 10.1109/ISTDM.2014.6874674

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