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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability

✍ Scribed by Eneman, G.; Brunco, D.P.; Witters, L.; Mitard, J.; Hikavyy, A.; De Keersgieter, A.; Roussel, P. J.; Loo, R.; Veloso, A.; Horiguchi, N.; Collaert, N.; Thean, A.

Book ID: 125953985
Publisher: IEEE
Year: 2014
Weight: 947 KB
Category: Article
ISBN: 1479954268
DOI: 10.1109/ISTDM.2014.6874646

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