[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Recent enhancements in BSIM6 bulk MOSFET model

✍ Agarwal, H.; Venugopalan, S.; Chalkiadaki, M.-A.; Paydavosi, N.; Duarte, J. P.; 📂 Article 📅 2013 🏛 IEEE ⚖ 951 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Impact of near-contact barriers on the subthreshold slope of short-channel CNTFETs

✍ Claus, Martin; Blawid, Stefan; Schroter, Michael 📂 Article 📅 2013 🏛 IEEE ⚖ 852 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

✍ Ettisserry, D. P.; Salemi, S.; Goldsman, N.; Potbhare, S.; Akturk, A.; Lelis, A. 📂 Article 📅 2013 🏛 IEEE ⚖ 731 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

✍ Ruic, Dino; Jungemann, Christoph 📂 Article 📅 2013 🏛 IEEE ⚖ 668 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

✍ Ruic, Dino; Jungemann, Christoph 📂 Article 📅 2013 🏛 IEEE ⚖ 668 KB

We present a full Newton-Raphson approach for solving the Poisson, Schrödinger and Boltzmann equations in a deterministic framework with Fourier harmonics expansion for a 2D nanoscale device. The effects of the Schrödinger equation are included via first order perturbation theory and prove to have a

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region

✍ Salemi, S.; Ettisserry, D. P.; Akturk, A.; Goldsman, N.; Lelis, A. 📂 Article 📅 2013 🏛 IEEE ⚖ 710 KB