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[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Recent enhancements in BSIM6 bulk MOSFET model

โœ Scribed by Agarwal, H.; Venugopalan, S.; Chalkiadaki, M.-A.; Paydavosi, N.; Duarte, J. P.; Agnihotri, S.; Yadav, C.; Kushwaha, P.; Chauhan, Y. S.; Enz, C. C.; Niknejad, A.; Hu, C.


Book ID
121399342
Publisher
IEEE
Year
2013
Weight
951 KB
Category
Article
ISBN
1467357332

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[IEEE 2013 International Conference on S
โœ Ruic, Dino; Jungemann, Christoph ๐Ÿ“‚ Article ๐Ÿ“… 2013 ๐Ÿ› IEEE โš– 668 KB

We present a full Newton-Raphson approach for solving the Poisson, Schrรถdinger and Boltzmann equations in a deterministic framework with Fourier harmonics expansion for a 2D nanoscale device. The effects of the Schrรถdinger equation are included via first order perturbation theory and prove to have a