[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

[IEEE 2013 International Conference on S

✍ Ruic, Dino; Jungemann, Christoph 📂 Article 📅 2013 🏛 IEEE ⚖ 668 KB

We present a full Newton-Raphson approach for solving the Poisson, Schrödinger and Boltzmann equations in a deterministic framework with Fourier harmonics expansion for a 2D nanoscale device. The effects of the Schrödinger equation are included via first order perturbation theory and prove to have a

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Recent enhancements in BSIM6 bulk MOSFET model

✍ Agarwal, H.; Venugopalan, S.; Chalkiadaki, M.-A.; Paydavosi, N.; Duarte, J. P.; 📂 Article 📅 2013 🏛 IEEE ⚖ 951 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

✍ Ettisserry, D. P.; Salemi, S.; Goldsman, N.; Potbhare, S.; Akturk, A.; Lelis, A. 📂 Article 📅 2013 🏛 IEEE ⚖ 731 KB

[IEEE 2013 International Conference on S

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region

✍ Salemi, S.; Ettisserry, D. P.; Akturk, A.; Goldsman, N.; Lelis, A. 📂 Article 📅 2013 🏛 IEEE ⚖ 710 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - A numerically efficient method for the hydrodynamic density-gradient model

✍ Jin, S.; Park, Y.J.; Min, H.S. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 389 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Scaling laws for the resistivity increase of sub-100 nm interconnects

✍ Steinhoegl, W.; Schindler, G.; Steinlesberger, G.; Traving, M.; Engelhardt, M. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 317 KB