[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

✍ Scribed by Ruic, Dino; Jungemann, Christoph

• Book ID: 125508431
• Publisher: IEEE
• Year: 2013
• Weight: 668 KB
• Category: Article
• ISBN: 1467357332
• DOI: 10.1109/SISPAD.2013.6650648

✦ Synopsis

We present a full Newton-Raphson approach for solving the Poisson, Schrödinger and Boltzmann equations in a deterministic framework with Fourier harmonics expansion for a 2D nanoscale device. The effects of the Schrödinger equation are included via first order perturbation theory and prove to have a significant impact. A comparison to the Gummel type iteration scheme yields superiority of the full Newton-Raphson method in convergence speed and solver time. The full Newton-Raphson method is also of particular relevance to small-signal analyses in this framework.