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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

✍ Scribed by Bangsaruntip, S.; Balakrishnan, K.; Cheng, S.-L.; Chang, J.; Brink, M.; Lauer, I.; Bruce, R. L.; Engelmann, S. U.; Pyzyna, A.; Cohen, G. M.; Gignac, L. M.; Breslin, C. M.; Newbury, J. S.; Klaus, D. P.; Majumdar, A.; Sleight, J. W.; Guillorn, M. A.

Book ID: 121795839
Publisher: IEEE
Year: 2013
Weight: 724 KB
Category: Article
ISBN: 1479923060
DOI: 10.1109/IEDM.2013.6724667

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