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[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs

✍ Scribed by Goud, A. Arun; Gupta, Sumeet Kumar; Choday, Sri Harsha; Roy, Kaushik

No coin nor oath required. For personal study only.

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