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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

✍ Scribed by Zhikai Tang, ; Sen Huang, ; Qimeng Jiang, ; Shenghou Liu, ; Cheng Liu, ; Chen, Kevin J.

Book ID: 124149764
Publisher: IEEE
Year: 2013
Weight: 738 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ISPSD.2013.6694478

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