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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 600 V-class trench-filling super junction power MOSFETs for low loss and low leakage current

✍ Scribed by Kagata, Yuma; Oda, Youhei; Hayashi, Keita; Akagi, Nozomu; Shibata, Takumi; Eguchi, Kouzi; Yamamoto, Tsuyoshi; Yamaguchi, Hitoshi

Book ID: 124102647
Publisher: IEEE
Year: 2013
Weight: 1009 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ISPSD.2013.6694457

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