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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - 14 nm FinFET Stress Engineering with Epitaxial SiGe Source/Drain

✍ Scribed by Choi, Munkang; Moroz, Victor; Smith, Lee; Penzin, Oleg

Book ID: 120067634
Publisher: IEEE
Year: 2012
Weight: 853 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/ISTDM.2012.6222469

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