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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction

โœ Scribed by Park, Jeongwon; Balasubramanian, Ramachandran; Jain, Amitabh; Riley, Deborah; Juneja, Harpreet; Kuppurao, Satheesh


Book ID
120067633
Publisher
IEEE
Year
2012
Weight
326 KB
Category
Article
ISBN
1457718634

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