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[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Analysis of electron traps in SiO2/IGZO interface by cyclic capacitance-voltage method

✍ Scribed by Ueoka, Yoshihiro; Fujii, Mami; Yamazaki, Haruka; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

Book ID: 126063033
Publisher: IEEE
Year: 2012
Weight: 275 KB
Category: Article
ISBN: 1467308374
DOI: 10.1109/IMFEDK.2012.6218580

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