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[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Numerical simulation of transport properties in InAs/Si heterojunction nanowire tunneling field effect transistors

✍ Scribed by Miyoshi, Y.; Ogawa, M.; Souma, S.; Nakamura, H.

Book ID: 124163535
Publisher: IEEE
Year: 2012
Weight: 634 KB
Category: Article
ISBN: 1467308374
DOI: 10.1109/IMFEDK.2012.6218605

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