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[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Strain induced modulation of switching behavior in carbon nanotube tunneling field effect transistors

✍ Scribed by Nakano, Takashi; Ogawa, Matsuto; Souma, Satofumi

Book ID: 120596157
Publisher: IEEE
Year: 2012
Weight: 514 KB
Category: Article
ISBN: 1467308374
DOI: 10.1109/IMFEDK.2012.6218620

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