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[IEEE 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Portland, OR, USA (2012.09.30-2012.10.3)] 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

✍ Scribed by Knoll, D.; Dmitriev, V.; Egorova, T.; Seletskij, V.; Shelepin, N.; Barth, R.; Fischer, G. G.; Grabolla, T.; Tillack, B.

Book ID: 125450089
Publisher: IEEE
Year: 2012
Weight: 373 KB
Category: Article
ISBN: 1467330191
DOI: 10.1109/bctm.2012.6352649

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