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[IEEE 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Portland, OR, USA (2012.09.30-2012.10.3)] 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Long-term reliability of high-performance SiGe:C heterojunction bipolar transistors

✍ Scribed by Fischer, G. G.; Micusik, D.; Pocej, A.

Book ID: 120999818
Publisher: IEEE
Year: 2012
Weight: 808 KB
Category: Article
ISBN: 1467330191
DOI: 10.1109/BCTM.2012.6352644

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