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[IEEE 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Portland, OR, USA (2012.09.30-2012.10.3)] 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow

✍ Scribed by Mertens, H.; Magnee, P. H. C.; Donkers, J. J. T. M; van Dalen, R.; Brunets, I.; Van Huylenbroeck, S.; Vleugels, F.; Vanhoucke, T.

Book ID: 118258233
Publisher: IEEE
Year: 2012
Weight: 515 KB
Category: Article
ISBN: 1467330191
DOI: 10.1109/bctm.2012.6352615

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