𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - High-performance SiC power devices and modules with high temperature operation

✍ Scribed by Nakamura, T.; Nakano, Y.; Sasagawa, M.; Otsuka, T.; Aketa, M.; Miura, M.

Book ID: 120972228
Publisher: IEEE
Year: 2011
Weight: 62 KB
Category: Article
ISBN: 1424484936
DOI: 10.1109/VTSA.2011.5872246

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Graphene transistors 2011

✍ Schwierz, Frank 📂 Article 📅 2011 🏛 IEEE ⚖ 235 KB

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Carbon nanotubes for VLSI: Interconnect and transistor applications

✍ Awano, Y.; Sato, S.; Nihei, M.; Sakai, T.; Ohno, Y.; Mizutani, T. 📂 Article 📅 2011 🏛 IEEE ⚖ 505 KB

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

✍ Liu, Bin; Yang, Mingchu; Zhan, Chunlei; Yang, Yue; Yeo, Yee-Chia 📂 Article 📅 2011 🏛 IEEE ⚖ 346 KB

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

✍ Chen, Yin-Nien; Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang 📂 Article 📅 2011 🏛 IEEE ⚖ 545 KB

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Physical IP and advanced SOI design for 22nm SOI technology

✍ Pelloie, Jean-Luc; Laabidi, Selma; Charafeddine, Kenza; Laplanche, Yves 📂 Article 📅 2011 🏛 IEEE ⚖ 81 KB

[IEEE 2011 International Symposium on VL

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - CMOS scaling for the 22nm node and beyond: Device physics and technology

✍ Kuhn, Kelin J. 📂 Article 📅 2011 🏛 IEEE ⚖ 734 KB