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[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

✍ Scribed by Liu, Bin; Yang, Mingchu; Zhan, Chunlei; Yang, Yue; Yeo, Yee-Chia

Book ID: 120264824
Publisher: IEEE
Year: 2011
Weight: 346 KB
Category: Article
ISBN: 1424484936
DOI: 10.1109/VTSA.2011.5872215

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