𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM

✍ Scribed by Asenov, P.; Adamu-Lema, F.; Roy, S.; Millar, C.; Asenov, A.; Roy, G.; Kovac, U.; Reid, D.

Book ID: 120024365
Publisher: IEEE
Year: 2011
Weight: 816 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6035024

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Thermoelectromechanical simulation of GaN HEMTs

✍ Ancona, M.G.; Binari, S.C. 📂 Article 📅 2011 🏛 IEEE ⚖ 691 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Study on carrier mobility in graphene nanoribbons

✍ Yu, Xinxin; Zhang, Jinyu; Kang, Jiahao; Qian, He; Yu, Zhiping; Tan, Yaohua 📂 Article 📅 2011 🏛 IEEE ⚖ 323 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - A compact model for early electromigration lifetime estimation

✍ de Orio, R. L.; Ceric, H.; Selberherr, S. 📂 Article 📅 2011 🏛 IEEE ⚖ 270 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs

✍ Hehenberger, Ph.; Goes, W.; Baumgartner, O.; Franco, J.; Kaczer, B.; Grasser, T. 📂 Article 📅 2011 🏛 IEEE ⚖ 605 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Parallel preconditioning for spherical harmonics expansions of the Boltzmann transport equation

✍ Rupp, Karl; Grasser, Tibor; Jungel, Ansgar 📂 Article 📅 2011 🏛 IEEE ⚖ 139 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation

✍ Rupp, Karl; Grasser, Tibor; Jungel, Ansgar 📂 Article 📅 2011 🏛 IEEE ⚖ 706 KB