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[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Mosfet's hot carrier degradation characterization and modeling at a microscopic scale

✍ Scribed by Randriamihaja, Y. Mamy; Zaka, A.; Huard, V.; Rafik, M.; Rideau, D.; Roy, D.; Bravaix, A.

Book ID: 120043072
Publisher: IEEE
Year: 2011
Weight: 351 KB
Category: Article
ISBN: 1424491134
DOI: 10.1109/IRPS.2011.5784606

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