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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

✍ Scribed by Dewey, G.; Chu-Kung, B.; Boardman, J.; Fastenau, J. M.; Kavalieros, J.; Kotlyar, R.; Liu, W. K.; Lubyshev, D.; Metz, M.; Mukherjee, N.; Oakey, P.; Pillarisetty, R.; Radosavljevic, M.; Then, H. W.; Chau, R.

Book ID: 120212594
Publisher: IEEE
Year: 2011
Weight: 620 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131666

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