✦ LIBER ✦

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

✍ Scribed by Boscke, T. S.; Muller, J.; Brauhaus, D.; Schroder, U.; Bottger, U.

No coin nor oath required. For personal study only.

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