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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs

✍ Scribed by Jousseaume, V.; Fantini, A.; Nodin, J.F.; Guedj, C.; Persico, A.; Buckley, J.; Tirano, S.; Lorenzi, P.; Vignon, R.; Feldis, H.; Minoret, S.; Grampeix, H.; Roule, A.; Favier, S.; Martinez, E.; Calka, P.; Rochat, N.; Auvert, G.; Barnes, J.P.; Gonon, P.; Vallee, C.; Perniola, L.; De Salvo, B.

Book ID: 126728296
Publisher: IEEE
Year: 2010
Weight: 941 KB
Category: Article
ISBN: 1424467195
DOI: 10.1109/IMW.2010.5488316

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