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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization

✍ Scribed by Deloge, Matthieu; Allard, Bruno; Candelier, Philippe; Damiens, Joel; Le-Roux, Elise; Rafik, Mustapha

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