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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

✍ Scribed by Nardi, F.; Ielmini, D.; Cagli, C.; Spiga, S.; Fanciulli, M.; Goux, L.; Wouters, D. J.

No coin nor oath required. For personal study only.

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