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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown

✍ Scribed by Selvaraj, S. Lawrence; Nagai, Kazuhiro; Egawa, Takashi

No coin nor oath required. For personal study only.

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