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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Low Power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs

✍ Scribed by Saripalli, V.; Mohata, D. K.; Mookerjea, S.; Datta, S.; Narayanan, V.

No coin nor oath required. For personal study only.

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