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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Fabrication of axially-doped silicon nanowire tunnel FETs and characterization of tunneling current

✍ Scribed by Vallett, Aaron L.; Minassian, Sharis; Datta, Suman; Redwing, Joan M.; Mayer, Theresa S.

No coin nor oath required. For personal study only.

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