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[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics

✍ Scribed by Esposto, Michele; Di Lecce, Valerio; Chini, Alessandro; De Guido, Stefano; Passaseo, Adriana; De Vittorio, Massimo

Book ID: 126607251
Publisher: IEEE
Year: 2009
Weight: 857 KB
Category: Article
ISBN: 1424443512
DOI: 10.1109/ESSDERC.2009.5331525

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