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[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs

✍ Scribed by Driussi, Francesco; Esseni, David

Book ID: 125525279
Publisher: IEEE
Year: 2009
Weight: 996 KB
Category: Article
ISBN: 1424443512
DOI: 10.1109/ESSDERC.2009.5331465

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