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[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Comparison of VLS grown Si NW tunnel FETs with different gate stacks

✍ Scribed by Moselund, K. E.; Ghoneim, H.; Bjork, M. T.; Schmid, H.; Karg, S.; Lortscher, E.; Riess, W.; Riel, H.

Book ID: 121234903
Publisher: IEEE
Year: 2009
Weight: 931 KB
Category: Article
ISBN: 1424443512
DOI: 10.1109/ESSDERC.2009.5331446

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