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[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

✍ Scribed by Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, Andrea L.; Redaelli, Andrea; Pirovano, Agostino

Book ID: 120221255
Publisher: IEEE
Year: 2009
Weight: 393 KB
Category: Article
ISBN: 1424428882
DOI: 10.1109/IRPS.2009.5173236

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