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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Vth fluctuation suppression and high performance of HfSiON/metal gate stacks by controlling capping-Y2O3 layers for 22nm bulk devices

✍ Scribed by Kamiyama, Satoshi; Etsuo Kurosawa, ; Shoji Abe, ; Masashi Kitajima, ; Toshio Aminaka, ; Takayuki Aoyama, ; Kazuto Ikeda, ; Yuzuru Ohji,

Book ID: 123619708
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 992 KB
Category: Article
ISBN: 1424456398
DOI: 10.1109/IEDM.2009.5424333

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