[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A 25-nm gate-length FinFET transistor module for 32nm node
โ Scribed by Chang-Yun Chang, ; Tsung-Lin Lee, ; Wann, Clement; Li-Shyue Lai, ; Hung-Ming Chen, ; Chih-Chieh Yeh, ; Chih-Sheng Chang, ; Chia-Cheng Ho, ; Jyh-Cherng Sheu, ; Tsz-Mei Kwok, ; Feng Yuan, ; Shao-Ming Yu, ; Chia-Feng Hu, ; Jeng-Jung Shen, ; Yi-Hsuan Liu, ; Chen-Ping Chen, ; Shin-Chih Chen, ; Li-Shiun Chen, ; Leo Chen, ; Yuan-Hung Chiu, ; Chu-Yun Fu, ; Ming-Jie Huang, ; Yu-Lien Huang, ; Shih-Ting Hung, ; Jhon-Jhy Liaw, ; Hsien-Chin Lin, ; Hsien-Hsin Lin, ; Lin, L. -T. S.; Shyue-Shyh Lin, ; Yuh-Jier Mii, ; Eric Ou-Yang, ; Ming-Feng Shieh, ; Chien-Chang Su, ; Shih-Peng Tai, ; Hun-Jan Tao, ; Ming-Huan Tsai, ; Kai-Ting Tseng, ; Kin-Weng Wang, ; Shiang-Bau Wang, ; Xu, Jeff J.; Fu-Kai Yang, ; Shu-Tine Yang, ; Chen-Nan Yeh,
- Book ID
- 121257788
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 775 KB
- Category
- Article
- ISBN
- 1424456398
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