✦ LIBER ✦

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling

✍ Scribed by Hokazono, A.; Itokawa, H.; Mizushima, I.; Kawanaka, S.; Inaba, S.; Toyoshima, Y.

No coin nor oath required. For personal study only.

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