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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - RF performance of top-gated, zero-bandgap graphene field-effect transistors

✍ Scribed by Meric, Inanc; Baklitskaya, Natalia; Kim, Philip; Shepard, Kenneth L.

Book ID: 123613927
Publisher: IEEE
Year: 2008
Weight: 721 KB
Category: Article
ISBN: 1424423775
DOI: 10.1109/IEDM.2008.4796738

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