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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

✍ Scribed by Radosavljevic, M.; Ashley, T.; Andreev, A.; Coomber, S. D.; Dewey, G.; Emeny, M. T.; Fearn, M.; Hayes, D. G.; Hilton, K. P.; Hudait, M. K.; Jefferies, R.; Martin, T.; Pillarisetty, R.; Rachmady, W.; Rakshit, T.; Smith, S. J.; Uren, M. J.; Wallis, D. J.; Wilding, P. J.; Chau, Robert

Book ID: 115522097
Publisher: IEEE
Year: 2008
Weight: 895 KB
Volume: 0
Category: Article
ISBN: 1424423775
DOI: 10.1109/iedm.2008.4796798

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