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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

✍ Scribed by Harada, Shinsuke; Kato, Makoto; Suzuki, Kenji; Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji; Arai, Kazuo

No coin nor oath required. For personal study only.

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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 1.8 m&#x003A9;cm2, 10 A Power MOSFET in 4H-SiC