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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation

✍ Scribed by Uemoto, Yasuhiro; Hikita, Masahiro; Ueno, Hiroaki; Matsuo, Hisayoshi; Ishida, Hidetoshi; Yanagihara, Manabu; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

Book ID: 121527863
Publisher: IEEE
Year: 2006
Weight: 535 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346930

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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - A Normally-off AlGaN/GaN Transistor with RonA=2.6m&#x003A9;cm2 and BVds=640V Using Conductivity Modulation

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation