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[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - AlGaN/GaN HEMTs: Experiment and Simulation of DC Characteristics

โœ Scribed by Faraclas, E.W.; Webster, R.T.; Anwar, A.F.M.


Book ID
121832019
Publisher
IEEE
Year
2005
Tongue
English
Weight
332 KB
Category
Article
ISBN-13
9781424400836

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