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[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - New Dielectrics for Gate Oxides and Surface Passivation on GaN

✍ Scribed by Gila, B.P.; Thaler, G.T.; Onstine, A.H.; Hlad, M.; Gerger, A.; Herrero, A.; Allums, K.K.; Stodilka, D.; Jang, S.; Kang, B.; Anderson, T.; Abernathy, C.R.; Ren, F.; Pearton, S.J.

Book ID: 121691194
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 144 KB
Category: Article
ISBN-13: 9781424400836
DOI: 10.1109/isdrs.2005.1596014

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