✦ LIBER ✦

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET

✍ Scribed by Hasanuzzaman, M.; Islam, S.K.; Alam, M.T.

No coin nor oath required. For personal study only.

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